BFG193 NPN Silicon RF Transistor Datasheet

BFG193 NPN Silicon RF Transistor

BFG 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFG 193 BFG193 Q62702-F1291 1=E 2=B 3=E 4=C Package SOT-223 Maximum Ratings Parameter .

Features

acteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V µA 100 nA 100 µA 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 30 mA, VCE = 8 V Semiconductor Group 2 Dec-13-1996 BFG 193 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit fT 6 8 0.6 0.4 2 - GHz pF 0.9 dB 1.3 2.1 - IC = 50.

The same part from a different manufacturer

BFG193 - INCHANGE

·Low Noise Figure NF = 1.3 dB TYP. @VCE = 8 V, IC = 10 mA, f = 900 MHz ·High Gain ︱S21e︱2 = 13.5 dB TYP. @VCE= 8 V,IC = .

BFG193 - Infineon Technologies AG

BFG193 NPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers f.

Related Product

No.	Partie #	Fabricant	Description
1	BFG194	Siemens Semiconductor Group	PNP Silicon RF Transistor
2	BFG196	Siemens Semiconductor Group	NPN Silicon RF Transistor
3	BFG196	Infineon Technologies AG	NPN Silicon RF Transistor
4	BFG197	NXP	NPN 7 GHz wideband transistor
5	BFG198	NXP	NPN 8GHz wideband transistor
6	BFG198	UTC	NPN TRANSISTOR
7	BFG19S	Siemens Semiconductor Group	NPN Silicon RF Transistor
8	BFG19S	Infineon Technologies AG	NPN Silicon RF Transistor
9	BFG10	NXP	NPN 2 GHz RF power transistor
10	BFG10W	NXP	UHF power transistor
11	BFG10X	NXP	UHF power transistor
12	BFG11	NXP	NPN 2 GHz RF power transistor

BFG193 - Siemens Semiconductor Group