BFG10 - NXP

BFG10 NPN 2 GHz RF power transistor

NPN silicon planar epitaxial transistor encapsulated in plastic, 4-pin dual-emitter SOT143 package. PINNING PIN DESCRIPTION BFG10; BFG10/X BFG10 (see Fig.1) 1 2 3 4 collector base emitter emitter handbook, 2 columns 4 3 1 Top view 2 MSB014 BFG10/X (see Fig.1) 1 2 3 4 MARKING TYPE NUMBER BFG10 BFG10/X CODE N70 N71 collector emitter base emitter Fig.1 .

Features

• High power gain
• High efficiency
• Small size discrete power amplifier
• 1.9 GHz operating area
• Gold metallization ensures excellent reliability. APPLICATIONS
• Common emitter class-AB operation in hand-held radio equipment at 1.9 GHz. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in plastic, 4-pin dual-emitter SOT143 package. PINNING PIN DESCRIPTION BFG10; BFG10/X BFG10 (see Fig.1) 1 2 3 4 collector base emitter emitter handbook, 2 columns 4 3 1 Top view 2 MSB014 BFG10/X (see Fig.1) 1 2 3 4 MARKING TYPE NUMBER BFG10 BFG10/X CODE N70 N71 collector emitter base em.