BFG194 - Siemens Semiconductor Group

BFG194 PNP Silicon RF Transistor

BFG 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFG 194 BFG194 Q62702-F1321 1=E 2=B 3=E 4=C Package SOT-223 Maxi.

Features

Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 15 50 - V nA 100 µA 1 15 - IC = 1 mA, IB = 0 Collector-base cutoff current ICBO IEBO hFE VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 70 mA, VCE = 8 V Semiconductor Group 2 Aug-22-1996 BFG 194 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit fT 3.5 5 1.4 0.4 4.7 - GHz pF 2 dB 2.8 4.7 - IC = 70 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance Ccb Cce - VCB = 10 V,.