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PINNING NPN planar epitaxial transistor in a PIN DESCRIPTION plastic SOT223 envelope, intended for wideband amplifier applications. 1 emitter fpage The device features a high gain and 2 base excellent output voltage capabilities. 3 emitter 4 collector Product specification BFG198 4 1 2 3 Top view MSB002 - 1 Fig.1 SOT223. QUICK REFEREN.
a high gain and 2 base excellent output voltage capabilities. 3 emitter 4 collector Product specification BFG198 4 1 2 3 Top view MSB002 - 1 Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS VCBO VCEO IC Ptot hFE fT GUM Vo collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain output voltage open emitter open base up to Ts = 135 C (note 1) IC = 50 mA; VCE = 5 V; Tj = 25 C IC = 50 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 C IC = 50 mA; VCE = 8 V; f = 500 MHz; T.
BFG198 - UTC
UTC BFG918 is NPN planar epitaxial transistor in a plastic, intended for wideband amplifier applications. The device fea.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BFG193 |
INCHANGE |
NPN Transistor |
|
| 2 | BFG193 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 3 | BFG193 |
Infineon Technologies AG |
NPN Silicon RF Transistor |
|
| 4 | BFG194 |
Siemens Semiconductor Group |
PNP Silicon RF Transistor |
|
| 5 | BFG196 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 6 | BFG196 |
Infineon Technologies AG |
NPN Silicon RF Transistor |
|
| 7 | BFG197 |
NXP |
NPN 7 GHz wideband transistor |
|
| 8 | BFG19S |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 9 | BFG19S |
Infineon Technologies AG |
NPN Silicon RF Transistor |
|
| 10 | BFG10 |
NXP |
NPN 2 GHz RF power transistor |
|
| 11 | BFG10W |
NXP |
UHF power transistor |
|
| 12 | BFG10X |
NXP |
UHF power transistor |
|