BFG194 |
Part Number | BFG194 |
Manufacturer | Siemens Semiconductor Group |
Description | BFG 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA ESD: Electrostatic discharg... |
Features |
Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
15 50 -
V nA 100 µA 1 15 -
IC = 1 mA, IB = 0
Collector-base cutoff current
ICBO IEBO hFE
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 2 V, IC = 0
DC current gain
IC = 70 mA, VCE = 8 V
Semiconductor Group
2
Aug-22-1996
BFG 194
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit
fT
3.5 5 1.4 0.4 4.7 -
GHz pF 2 dB 2.8 4.7 -
IC = 70 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
Ccb Cce
-
VCB = 10 V,... |
Document |
BFG194 Data Sheet
PDF 65.46KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BFG193 |
INCHANGE |
NPN Transistor | |
2 | BFG193 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
3 | BFG193 |
Infineon Technologies AG |
NPN Silicon RF Transistor | |
4 | BFG196 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
5 | BFG196 |
Infineon Technologies AG |
NPN Silicon RF Transistor |