BFG193 |
Part Number | BFG193 |
Manufacturer | INCHANGE |
Description | ·Low Noise Figure NF = 1.3 dB TYP. @VCE = 8 V, IC = 10 mA, f = 900 MHz ·High Gain ︱S21e︱2 = 13.5 dB TYP. @VCE= 8 V,IC = 30 mA,f = 900 MHz ·Minimum Lot-to-Lot variations for robust device performance a... |
Features |
TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0
12
V
ICES
Collector Cutoff Current
VCE= 20V; VBE= 0
100 μA
ICBO
Collector Cutoff Current
VCB= 10V; IE= 0
0.1 μA
IEBO
Emitter Cutoff Current
VEB= 1V; IC= 0
1
μA
hFE
DC Current Gain
IC= 30mA ; VCE= 8V
50
200
fT
Current-Gain—Bandwidth Product
IC= 50mA ; VCE= 8V; f= 500MHz
6
8
GHz
COB
Output Capacitance
IE= 0 ; VCB= 10V; f= 1MHz
0.6 0.9 pF
PG
Power Gain
IC= 30mA ; VCE= 8V; f= 900MHz
15.5
dB
PG
Power Gain
IC= 30mA ; VCE= 8V; f= 1.8GHz
10
dB
︱S21e︱2 Insertion Power Gain ︱S21e︱2 Insert... |
Document |
BFG193 Data Sheet
PDF 205.21KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BFG193 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
2 | BFG193 |
Infineon Technologies AG |
NPN Silicon RF Transistor | |
3 | BFG194 |
Siemens Semiconductor Group |
PNP Silicon RF Transistor | |
4 | BFG196 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
5 | BFG196 |
Infineon Technologies AG |
NPN Silicon RF Transistor |