BFG135A - Siemens Semiconductor Group

BFG135A NPN Silicon RF Transistor

BFG 135A NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 70mA to 130mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor • fT = 6 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type.

Features

or Group 1 Dec-16-1996 BFG 135A Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 15 120 - V µA 100 nA 50 µA 1 80 250 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 25 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 100 mA, VCE = 8 V Semiconductor Group 2 Dec-16-1996 BFG 135A Electrical Characteristics at TA = 25°C, unless otherwise specified. Pa.