BFG135 - NXP

BFG135 NPN 7GHz wideband transistor

NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated emitter-ballasting resistors, ensure high output voltage capabilities at a low distortion level. The distribution of the active areas across the surface of the device gives an excellent temperature .

Features

0 transition frequency IC = 100 mA; VCE = 10 V; f = 1 GHz;  Tamb = 25 C maximum unilateral power IC = 100 mA; VCE = 10 V; f = 500 MHz;  gain Tamb = 25 C IC = 100 mA; VCE = 10 V; f = 800 MHz;  Tamb = 25 C output voltage dim = 60 dB; IC = 100 mA; VCE = 10 V;  RL = 75 ; Tamb = 25 C; f(p+qr) = 793.25 MHz TYP.     130 7 16 12 850 MAX. 25 15 150 1      UNIT V V mA W GHz dB dB mV LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS VCBO VCEO VEBO IC Ptot Tstg Tj collector-base voltage collector-emitter voltage emitt.