NPN wideband transistor in a microminiature plastic SOT143 surface mounting envelope with double emitter bonding. It is intended for use in wideband aerial amplifiers using SMD technology. PINNING PIN Code: E6 1 2 3 4 collector base emitter emitter 1 Top view BFG17A DESCRIPTION handbook, 2 columns 4 3 2 MSB014 Fig.1 SOT143. QUICK REFERENCE DATA SYMBOL .
= 800 MHz; Tamb = 25 °C IC = 2 mA; VCE = 5 V; f = 800 MHz; Tamb = 25 °C; ZS = 60 Ω; bs = opt. open base CONDITIONS open emitter MIN. − − − − 20 − − − − TYP. − − − − − 2.8 0.4 15 2.5 MAX. 25 15 50 300 150 − − − − GHz pF dB dB UNIT V V mA mW LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature up to.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BFG10 |
NXP |
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2 | BFG10W |
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3 | BFG10X |
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4 | BFG11 |
NXP |
NPN 2 GHz RF power transistor | |
5 | BFG11W |
NXP |
NPN 2 GHz power transistor | |
6 | BFG135 |
NXP |
NPN 7GHz wideband transistor | |
7 | BFG135A |
Siemens Semiconductor Group |
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8 | BFG135A |
Infineon Technologies AG |
NPN Silicon RF Transistor | |
9 | BFG16A |
NXP |
NPN 2 GHz wideband transistor | |
10 | BFG193 |
INCHANGE |
NPN Transistor | |
11 | BFG193 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
12 | BFG193 |
Infineon Technologies AG |
NPN Silicon RF Transistor |