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BFG135 |
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| Part Number | BFG135 |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated emitter-ballasting resistors, ensure h... |
| Features |
0
transition frequency
IC = 100 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 C
maximum unilateral power IC = 100 mA; VCE = 10 V; f = 500 MHz;
gain
Tamb = 25 C
IC = 100 mA; VCE = 10 V; f = 800 MHz; Tamb = 25 C
output voltage
dim = 60 dB; IC = 100 mA; VCE = 10 V; RL = 75 ; Tamb = 25 C; f(p+qr) = 793.25 MHz
TYP. 130 7
16
12
850
MAX. 25 15 150 1
UNIT V V mA W
GHz
dB
dB
mV
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO VCEO VEBO IC Ptot Tstg Tj
collector-base voltage collector-emitter voltage emitt... |
| Document |
 BFG135 Data Sheet
PDF 269.06KB |
| Distributor | Stock | Price | Buy |
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