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MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features l High-Speed Switching and High Reverse Breakdown Voltage l Moisture Sensitivity Level 1 l Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates Compliant. See ordering information) Mechanic.
l High-Speed Switching and High Reverse Breakdown Voltage l Moisture Sensitivity Level 1 l Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates Compliant. See ordering information) Mechanical Data l Case: MiniMELF, Glass l Terminals: Solderable per MIL-STD-202, Method 208 l Polarity: Indicated by Cathode Band l Weight: 0.05 grams ( approx.) Maximum Ratings @ 25oC Unless Otherwise Specified Characteristic Symbol Peak Repetitive Reverse Voltage VRRM Continuous reverse Voltage VR Continuous forward current IF Repetitive peak Forward Current IFRM Non-rep. Peak Forward Current t.
BAS32L - nexperia
Single high-speed switching diode, fabricated in planar technology, and encapsulated in a small hermetically sealed glas.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BAS321 |
NXP |
General purpose diode |
|
| 2 | BAS321 |
nexperia |
General purpose diode |
|
| 3 | BAS321 |
Bruckewell |
General Purpose Diode |
|
| 4 | BAS321-Q |
nexperia |
General purpose diode |
|
| 5 | BAS321J |
nexperia |
High-voltage switching diode |
|
| 6 | BAS3005A |
Infineon Technologies |
Low VF Schottky Diode |
|
| 7 | BAS3005A-02V |
Infineon |
Low VF Schottky Diode |
|
| 8 | BAS3005B |
Infineon Technologies |
Medium Power AF Schottky Diode |
|
| 9 | BAS3005B-02LRH |
Infineon |
Medium Power AF Schottky Diode |
|
| 10 | BAS3005B-02V |
Infineon |
Medium Power AF Schottky Diode |
|
| 11 | BAS3007A |
Infineon Technologies |
Low VF Schottky Diode Array |
|
| 12 | BAS3010A |
Infineon Technologies |
Medium Power AF Schottky Diode |
|