BAS321J - nexperia

BAS321J High-voltage switching diode

High-voltage switching diode in a very small SOD323F (SC-90) flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr ≤ 50 ns • Low leakage current: IR ≤ 100 nA • High reverse voltage VR ≤ 200 V • Low capacitance: Cd ≤ 2 pF • Very small SMD plastic package • AEC-Q101 qualified 3. Applications • High-speed.

Features

• High switching speed: trr ≤ 50 ns
• Low leakage current: IR ≤ 100 nA
• High reverse voltage VR ≤ 200 V
• Low capacitance: Cd ≤ 2 pF
• Very small SMD plastic package
• AEC-Q101 qualified 3. Applications
• High-speed switching
• General-purpose switching
• Voltage clamping
• Reverse polarity protection 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ IF VR VRRM forward current reverse voltage repetitive peak reverse voltage [1] - - VF forward voltage IF = 200 mA; tp ≤ 300 µs; δ ≤ 0.02; -- Tj = 25 °C IR reverse current VR = 200 V; puls.