The AT28LV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of just 54 mW. When the device is deselected, the CMOS standby current is les.
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Single 3.3V ± 10% Supply 3-Volt-Only Read and Write Operation Software-Protected Programming Low Power Dissipation 15 mA Active Current 20 µA CMOS Standby Current Fast Read Access Time − 200 ns Automatic Page Write Operation Internal Address and Data Latches for 64-Bytes Internal Control Timer Fast Write Cycle Times Page Write Cycle Time: 10 ms Maximum 1 to 64-Byte Page Write Operation DATA Polling for End of Write Detection High Reliability CMOS Technology Endurance: 10,000 Cycles Data Retention: 10 Years JEDEC Approved Byte-Wide Pinout Commercial and Industrial Temper.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AT28LV010 |
ATMEL Corporation |
1-Megabit (128K x 8) Low Voltage Paged Parallel EEPROM | |
2 | AT28LV256 |
ATMEL Corporation |
256K 32K x 8 Low Voltage CMOS E2PROM | |
3 | AT28BV16 |
ATMEL Corporation |
16K 2K x 8 Battery-Voltage CMOS E2PROM | |
4 | AT28BV256 |
ATMEL Corporation |
256K (32K x 8) Battery-Voltage Parallel EEPROMs | |
5 | AT28BV64 |
ATMEL Corporation |
64K (8K x 8) Battery-Voltage Parallel EEPROMs | |
6 | AT28BV64B |
ATMEL Corporation |
64K (8K x 8) Battery-Voltage Parallel EEPROM | |
7 | AT28C010 |
ATMEL Corporation |
1-Megabit (128K x 8) Paged Parallel Military EEPROM | |
8 | AT28C010 |
ATMEL |
1-megabit (128K x 8) Paged Parallel EEPROM | |
9 | AT28C010 |
Microchip |
1-Megabit (128K x 8) Paged Parallel EEPROM | |
10 | AT28C010-12DK |
ATMEL |
Space 1-MBit (128K x 8) Paged Parallel EEPROM | |
11 | AT28C040 |
ATMEL Corporation |
4-Megabit (512K x 8) Paged Parallel EEPROM | |
12 | AT28C16 |
ATMEL Corporation |
16K 2K x 8 CMOS E2PROM |