AT28BV64 - ATMEL Corporation

AT28BV64 64K (8K x 8) Battery-Voltage Parallel EEPROMs

The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable Read-only Memory specifically designed for battery powered applications. Its 64K of memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation less than 30 mW. When the.

Features

• 2.7V to 3.6V Supply
  – Full Read and Write Operation
• Low Power Dissipation
  – 8 mA Active Current
  – 50 µA CMOS Standby Current
• Read Access Time
  – 300 ns
• Byte Write
  – 3 ms
• Direct Microprocessor Control
  – DATA Polling
  – READY/BUSY Open Drain Output
• High Reliability CMOS Technology
  – Endurance: 100,000 Cycles
  – Data Retention: 10 Years
• JEDEC Approved Byte-Wide Pinout
• Industrial Temperature Ranges 64K (8K x 8) Battery-Voltage Parallel EEPROMs 1. Description The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable Read-only Memory specifically designed for bat.