The AT28BV256 is a high-performance electrically erasable and programmable readonly memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access time.
• Single 2.7V - 3.6V Supply
• Fast Read Access Time
– 200 ns
• Automatic Page Write Operation
– Internal Address and Data Latches for 64 Bytes
– Internal Control Timer
• Fast Write Cycle Times
– Page Write Cycle Time: 10 ms Maximum
– 1- to 64-byte Page Write Operation
• Low Power Dissipation
– 15 mA Active Current
– 20 µA CMOS Standby Current
• Hardware and Software Data Protection
• Data Polling for End of Write Detection
• High Reliability CMOS Technology
– Endurance: 10,000 Cycles
– Data Retention: 10 Years
• JEDEC Approved Byte-wide Pinout
• Industrial Temperature Ranges
• Green (Pb/Halide.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AT28BV16 |
ATMEL Corporation |
16K 2K x 8 Battery-Voltage CMOS E2PROM | |
2 | AT28BV64 |
ATMEL Corporation |
64K (8K x 8) Battery-Voltage Parallel EEPROMs | |
3 | AT28BV64B |
ATMEL Corporation |
64K (8K x 8) Battery-Voltage Parallel EEPROM | |
4 | AT28C010 |
ATMEL Corporation |
1-Megabit (128K x 8) Paged Parallel Military EEPROM | |
5 | AT28C010 |
ATMEL |
1-megabit (128K x 8) Paged Parallel EEPROM | |
6 | AT28C010 |
Microchip |
1-Megabit (128K x 8) Paged Parallel EEPROM | |
7 | AT28C010-12DK |
ATMEL |
Space 1-MBit (128K x 8) Paged Parallel EEPROM | |
8 | AT28C040 |
ATMEL Corporation |
4-Megabit (512K x 8) Paged Parallel EEPROM | |
9 | AT28C16 |
ATMEL Corporation |
16K 2K x 8 CMOS E2PROM | |
10 | AT28C16-T |
ATMEL |
16K (2K x 8) PCMCIA Nonvolatile Attribute Memory | |
11 | AT28C17 |
ATMEL Corporation |
16K 2K x 8 CMOS E2PROM | |
12 | AT28C256 |
ATMEL Corporation |
256K (32K x 8) Paged Parallel EEPROM |