AT28C040 - ATMEL Corporation

AT28C040 4-Megabit (512K x 8) Paged Parallel EEPROM

The AT28C040 is a high-performance electrically erasable and programmable readonly memory (EEPROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of just 440 mW. The AT28C040 is accessed like a static RAM for the.

Features

• Read Access Time
  – 200 ns
• Automatic Page Write Operation
  – Internal Address and Data Latches for 256 Bytes
  – Internal Control Timer
• Fast Write Cycle Time
  – Page Write Cycle Time
  – 10 ms Maximum
  – 1 to 256 Byte Page Write Operation
• Low Power Dissipation
  – 50 mA Active Current
• Hardware and Software Data Protection
• DATA Polling for End of Write Detection
• High Reliability CMOS Technology
  – Endurance: 10,000 Cycles
  – Data Retention: 10 Years
• Single 5V ± 10% Supply
• CMOS and TTL Compatible Inputs and Outputs
• JEDEC Approved Byte-Wide Pinout 1. Description The AT28C040 is a high-per.