Features • Fast Read Access Time – 120 ns • Automatic Page Write Operation – Internal Address and Data Latches for 128 Bytes – Internal Control Timer • Fast Write Cycle Time – Page Write Cycle Time – 10 ms Maximum – 1 to 128-byte Page Write Operation • Low Power Dissipation – 50 mA Active Current – 10 mA CMOS Standby Current • Hardware and Software Data Prot.
• Fast Read Access Time
– 120 ns
• Automatic Page Write Operation
– Internal Address and Data Latches for 128 Bytes
– Internal Control Timer
• Fast Write Cycle Time
– Page Write Cycle Time
– 10 ms Maximum
– 1 to 128-byte Page Write Operation
• Low Power Dissipation
– 50 mA Active Current
– 10 mA CMOS Standby Current
• Hardware and Software Data Protection
• DATA Polling for End of Write Detection
• High Reliability CMOS Technology
– Endurance: 5.104 Read/Modify Write Cycles @ Ground Level
– Data Retention: 10 Years
• Operating Range: 4.5V to 5.5V, -55 to +125°C
• CMOS and TTL Compatible Inputs.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AT28C010 |
ATMEL Corporation |
1-Megabit (128K x 8) Paged Parallel Military EEPROM | |
2 | AT28C010 |
ATMEL |
1-megabit (128K x 8) Paged Parallel EEPROM | |
3 | AT28C010 |
Microchip |
1-Megabit (128K x 8) Paged Parallel EEPROM | |
4 | AT28C040 |
ATMEL Corporation |
4-Megabit (512K x 8) Paged Parallel EEPROM | |
5 | AT28C16 |
ATMEL Corporation |
16K 2K x 8 CMOS E2PROM | |
6 | AT28C16-T |
ATMEL |
16K (2K x 8) PCMCIA Nonvolatile Attribute Memory | |
7 | AT28C17 |
ATMEL Corporation |
16K 2K x 8 CMOS E2PROM | |
8 | AT28C256 |
ATMEL Corporation |
256K (32K x 8) Paged Parallel EEPROM | |
9 | AT28C64 |
ATMEL Corporation |
64K (8K x 8) Parallel EEPROMs | |
10 | AT28C64B |
ATMEL Corporation |
64K (8K x 8) Parallel EEPROM | |
11 | AT28C64B |
Microchip |
64-Kbit (8K x 8) Industrial Parallel EEPROM | |
12 | AT28C64E |
ATMEL Corporation |
64K (8K x 8) Parallel EEPROMs |