The AT28BV16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28BV16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28BV16 is accessed like a static RAM for the read or write cycles without the need.
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2.7 to 3.6V Supply Full Read and Write Operation Low Power Dissipation 8 mA Active Current 50 µA CMOS Standby Current Read Access Time - 250 ns Byte Write - 3 ms Direct Microprocessor Control DATA Polling READ/BUSY Open Drain Output on TSOP High Reliability CMOS Technology Endurance: 100,000 Cycles Data Retention: 10 Years Low Voltage CMOS Compatible Inputs and Outputs JEDEC Approved Byte Wide Pinout Commercial and Industrial Temperature Ranges
16K (2K x 8) Battery-Voltage™ CMOS E2PROM
Description
The AT28BV16 is a low-power, high-performance Electrically Erasable and Pro.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AT28BV256 |
ATMEL Corporation |
256K (32K x 8) Battery-Voltage Parallel EEPROMs | |
2 | AT28BV64 |
ATMEL Corporation |
64K (8K x 8) Battery-Voltage Parallel EEPROMs | |
3 | AT28BV64B |
ATMEL Corporation |
64K (8K x 8) Battery-Voltage Parallel EEPROM | |
4 | AT28C010 |
ATMEL Corporation |
1-Megabit (128K x 8) Paged Parallel Military EEPROM | |
5 | AT28C010 |
ATMEL |
1-megabit (128K x 8) Paged Parallel EEPROM | |
6 | AT28C010 |
Microchip |
1-Megabit (128K x 8) Paged Parallel EEPROM | |
7 | AT28C010-12DK |
ATMEL |
Space 1-MBit (128K x 8) Paged Parallel EEPROM | |
8 | AT28C040 |
ATMEL Corporation |
4-Megabit (512K x 8) Paged Parallel EEPROM | |
9 | AT28C16 |
ATMEL Corporation |
16K 2K x 8 CMOS E2PROM | |
10 | AT28C16-T |
ATMEL |
16K (2K x 8) PCMCIA Nonvolatile Attribute Memory | |
11 | AT28C17 |
ATMEL Corporation |
16K 2K x 8 CMOS E2PROM | |
12 | AT28C256 |
ATMEL Corporation |
256K (32K x 8) Paged Parallel EEPROM |