The AT28C16-T is the ideal nonvolatile attribute memory: it is a low power, 5-volt-only byte writable nonvolatile memory (EEPROM). Standby current is typically less than 100 µA. The AT28C16-T is written like a Static RAM, eliminating complex programming algorithms. The fast write cycle times of 1 ms, allow quick card reconfiguration in-system. Data retention.
• Ideal Rewritable Attribute Memory
• Simple Write Operation
– Self-Timed Byte Writes
– On-chip Address and Data Latch for SRAM-like Write Operation
– Fast Write Cycle Time - 1 ms
– 5-Volt-Only Nonvolatile Writes
• End of Write Detection
– RDY/BUSY Output
– DATA Polling
• High Reliability
– Endurance: 100,000 Write Cycles
– Data Retention: 10 Years Minimum
• Single 5-Volt Supply for Read and Write
• Very Low Power
– 30 mA Active Current
– 100 µA Standby Current
Description
The AT28C16-T is the ideal nonvolatile attribute memory: it is a low power, 5-volt-only byte writable nonvolatile memory (.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AT28C16 |
ATMEL Corporation |
16K 2K x 8 CMOS E2PROM | |
2 | AT28C17 |
ATMEL Corporation |
16K 2K x 8 CMOS E2PROM | |
3 | AT28C010 |
ATMEL Corporation |
1-Megabit (128K x 8) Paged Parallel Military EEPROM | |
4 | AT28C010 |
ATMEL |
1-megabit (128K x 8) Paged Parallel EEPROM | |
5 | AT28C010 |
Microchip |
1-Megabit (128K x 8) Paged Parallel EEPROM | |
6 | AT28C010-12DK |
ATMEL |
Space 1-MBit (128K x 8) Paged Parallel EEPROM | |
7 | AT28C040 |
ATMEL Corporation |
4-Megabit (512K x 8) Paged Parallel EEPROM | |
8 | AT28C256 |
ATMEL Corporation |
256K (32K x 8) Paged Parallel EEPROM | |
9 | AT28C64 |
ATMEL Corporation |
64K (8K x 8) Parallel EEPROMs | |
10 | AT28C64B |
ATMEL Corporation |
64K (8K x 8) Parallel EEPROM | |
11 | AT28C64B |
Microchip |
64-Kbit (8K x 8) Industrial Parallel EEPROM | |
12 | AT28C64E |
ATMEL Corporation |
64K (8K x 8) Parallel EEPROMs |