AP4955GM - Advanced Power Electronics

AP4955GM P-CHANNEL ENHANCEMENT MODE POWER MOSFET

TThe Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness. D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continu.

Features

ifications subject to change without notice 200303041 www.DataSheet4U.com AP4955GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj RDS(ON) Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA 2 Min. -20 -0.5 - Typ. -0.01 Max. Units 45 65 -1.2 -1 -25 ±100 30 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA Static Drain-Source On-Resistance VGS=-4.5V, ID=-5A VGS=-2.5V, ID=-4A 9 19 3 6 9 10 52 24 270 230 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off.