AP4953GM-HF - Advanced Power Electronics

AP4953GM-HF DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP4953 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. G1 BVDSS RDS(ON) ID D1 G2 S1 -30V 53mΩ -5A D2 S2 The SO-8 package is widely preferred f.

Features

sed Drain Current1 Total Power Dissipation - 30 V +20 V -5 A -4 A - 20 A 2W Linear Derating Factor 0.016 W/℃ TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Value 62.5 Unit ℃/W Data and specifications subject to change without notice 1 201501136AP AP4953GM-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf C.