AP4953M - Advanced Power Electronics

AP4953M P-CHANNEL ENHANCEMENT MODE POWER MOSFET

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. G1 D1 D2 G2 S1 S2 Abso.

Features

re Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit ℃/W Data and specifications subject to change without notice 20020513 www.DataSheet4U.com AP4953M Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA Min. Typ. Max. Units -30 -1 -0.1 53 90 -3 -1 -25 - V V/℃ mΩ mΩ V S uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA RDS(ON) VGS=.