AP4951GM-HF - Advanced Power Electronics

AP4951GM-HF DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP4951 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. G1 D1 G2 D2 The SO-8 package is widely preferred for all commercialindustrial surface mo.

Features

10V3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor -60 +20 -3.4 -2.7 -20 2 0.016 V V A A A W W/℃ TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 62.5 Unit ℃/W 1 201501125 AP4951GM-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS ∆BVDSS/∆Tj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(o.