AP4951GM-HF-3 - Advanced Power Electronics

AP4951GM-HF-3 Dual P-channel Enhancement-mode Power MOSFETs

G1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The AP4951GM-HF-3 is in the popular SO-8 surface-mount package and is well-suited for use in low-voltage DC/DC conversion and general load-switching applications. G2 S1 S2 D2 D2 D1 D1 S.

Features

Maximum Thermal Resistance, Junction-ambient3 Rating -60 ±20 -3.4 -2.7 -20 2 0.016 -55 to 150 -55 to 150 Value 62.5 Units V V A A A W W/°C °C °C Unit °C/W Ordering Information AP4951GM-HF-3TR : in RoHS-compliant halogen-free SO-8, shipped on tape and reel, 3000pcs/reel ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 200711083-3 1/5 Advanced Power Electronics Corp. AP4951GM-HF-3 Electrical Characteristics at Tj = 25°C (unless otherwise specified) Symbol BVDSS ∆BVDSS/∆Tj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Test Conditi.