AP4501SSD - Advanced Power Electronics

AP4501SSD N with Schottky AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

The Advanced Power MOSFETs from APEC provide the design with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. AP4501SSD included N , P channel enhancement mode power MOSFET and Shottky diode. G1 D2 G2 S1 A S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Paramete.

Features

Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit ℃/W Data and specifications subject to change without notice 200221031 www.DataSheet4U.com AP4501SSD N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 30 1 - Typ. 0.031 Max. Units 36 55 3 100 1 ±100 V V/℃ mΩ mΩ V S uA mA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON.