AP4501SSD |
Part Number | AP4501SSD |
Manufacturer | Advanced Power Electronics |
Description | The Advanced Power MOSFETs from APEC provide the design with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. AP4501SSD included N , P channel... |
Features |
Operating Junction Temperature Range
Thermal Data
Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient
3
Value Max. 62.5
Unit ℃/W
Data and specifications subject to change without notice
200221031
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AP4501SSD
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
2
Test Conditions VGS=0V, ID=250uA
Min. 30 1 -
Typ. 0.031
Max. Units 36 55 3 100 1 ±100 V V/℃ mΩ mΩ V S uA mA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON... |
Document |
AP4501SSD Data Sheet
PDF 140.43KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | AP4501SD |
Advanced Power Electronics |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
2 | AP4501SM |
Advanced Power Electronics |
POWER MOSFET | |
3 | AP4501AGEM-HF |
Advanced Power Electronics |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
4 | AP4501AGEY-HF |
Advanced Power Electronics |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
5 | AP4501AGM |
Advanced Power Electronics |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |