AP4501GM-HF - Advanced Power Electronics

AP4501GM-HF N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP4501 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. N-CH P-CH BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 30V 28mΩ 7A -30V 50mΩ -5.3A D2 The SO-8 .

Features

M PD@TA=25℃ Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor +20 7.0 5.8 20 2 0.016 +20 -5.3 -4.7 -20 V A A A W W/℃ TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 62.5 Unit ℃/W 1 201501096AP AP4501GM-HF N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test.