AP4501M - Advanced Power Electronics

AP4501M N AND P-CHANNEL ENHANCEMENT

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. G1 D1 D2 G2 S1 S2 Abso.

Features

ipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Max. Value 62.5 Unit ℃/W Data and specifications subject to change without notice 201225022 www.DataSheet4U.com AP4501M N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. Typ. Max. Units 30 1 0.02 28 42 3 1 25 - V V/℃ mΩ mΩ V S uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Co.