AP4501SM - Advanced Power Electronics

AP4501SM POWER MOSFET

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. G1 D1 D2 G2 S1 S2 Abso.

Features

near Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RthJA Parameter Thermal Resistance Junction-Ambient 3 Value Max. 62.5 Unit ℃/W Data and specifications subject to change without notice 200410031 AP4501SM N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=6A VGS=4.5V, ID=5A Min. 30 1 - Typ. 12 8.2 2 4.3 6 5.2 18.8 4.4 645 150 95 Max. Units 33 50 3 100 1 ±100 V mΩ mΩ V S uA .