AP4501AGEY-HF - Advanced Power Electronics

AP4501AGEY-HF N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP4501A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. G1 BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 1 G2 The 2928-8 J-lead package provides good on-r.

Features

ain Current3 Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range +20 +20 6.5 -4.5 5.2 -3.6 30 -20 1.38 -55 to 150 -55 to 150 V A A A W ℃ ℃ Thermal Data Symbol Parameter Rthj-a Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 90 Unit ℃/W 1 201410023AP AP4501AGEY-HF N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss .