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AP4501SM |
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| Part Number | AP4501SM |
| Manufacturer | Advanced Power Electronics |
| Description | The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is universall... |
| Features |
near Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol RthJA Parameter Thermal Resistance Junction-Ambient
3
Value Max. 62.5
Unit ℃/W
Data and specifications subject to change without notice
200410031
AP4501SM
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance
2
Test Conditions VGS=0V, ID=250uA VGS=10V, ID=6A VGS=4.5V, ID=5A
Min. 30 1 -
Typ. 12 8.2 2 4.3 6 5.2 18.8 4.4 645 150 95
Max. Units 33 50 3 100 1 ±100 V mΩ mΩ V S uA ... |
| Document |
 AP4501SM Data Sheet
PDF 99.69KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AP4501SD |
Advanced Power Electronics |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 2 | AP4501SSD |
Advanced Power Electronics |
N with Schottky AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 3 | AP4501AGEM-HF |
Advanced Power Electronics |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 4 | AP4501AGEY-HF |
Advanced Power Electronics |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 5 | AP4501AGM |
Advanced Power Electronics |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|