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AP4501GM-HF |
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| Part Number | AP4501GM-HF |
| Manufacturer | Advanced Power Electronics |
| Description | AP4501 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an ext... |
| Features |
M PD@TA=25℃
Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
+20 7.0 5.8 20
2 0.016
+20 -5.3 -4.7 -20
V A A A W W/℃
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
-55 to 150 -55 to 150
℃ ℃
Thermal Data
Symbol Rthj-a
Parameter Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value 62.5
Unit ℃/W
1 201501096AP
AP4501GM-HF
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test... |
| Document |
 AP4501GM-HF Data Sheet
PDF 87.90KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AP4501GM |
Advanced Power Electronics |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 2 | AP4501GD |
Advanced Power Electronics |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 3 | AP4501GSD |
Advanced Power Electronics |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 4 | AP4501AGEM-HF |
Advanced Power Electronics |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 5 | AP4501AGEY-HF |
Advanced Power Electronics |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|