Advanced Power Electronics Corp. AP30G40GEO-HF Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ ICP=150A @VGE=3.0V ▼ Low Gate Drive ▼ Strobe Flash Applications ▼ RoHS Compliant & Halogen-Free C C C C TSSOP-8 G E E E VCE ICP G 400V 150A C E Absolute Maximum Ratings Symbol Parameter VCE VGEP ICP PD@TA=25oC1 TSTG TJ Collector-Emitt.
rge VCE=200V -6 Qgc Gate-Collector Charge VGE=4V - 25 td(on) Turn-on Delay Time VCC=320V - 200 tr td(off) Rise Time Turn-off Delay Time IC=150A RG=10Ω - 900 - 800 tf Fall Time VGE=3V - 650 Cies Input Capacitance VGE=0V - 4140 Coes Output Capacitance VCE=30V - 30 Cres RthJA1 Reverse Transfer Capacitance f=1.0MHz Thermal Resistance Junction-Ambient - 20 -- Max. +30 10 9 1.2 96 125 Units uA uA V V nC nC nC ns ns ns ns pF pF pF oC/W Notes: 1.Surface mounted on 1 in2 copper pad of FR4 board, t=10s. Data and specifications subject to change without notice 1 201111251 AP.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AP30G40AEO |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
2 | AP30G100W |
Advanced Power Electronics |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | |
3 | AP30G120ASW |
Advanced Power Electronics |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | |
4 | AP30G120ASW-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
5 | AP30G120BSW-HF |
Advanced Power Electronics |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | |
6 | AP30G120CSW-HF |
Advanced Power Electronics |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | |
7 | AP30G120SW |
Advanced Power Electronics |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | |
8 | AP30G120W |
Advanced Power Electronics |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | |
9 | AP3000 |
APTech |
1/4 INCH DIAPHRAGM VALVE | |
10 | AP3000A-00 |
ASI |
SILICON PIN DIODE CHIP | |
11 | AP3000C-11 |
ASI |
SILICON PIN DIODE | |
12 | AP3001 |
BCD Semiconductor |
PWM BUCK DC-DC CONVERTER |