AP30G40AEO - Advanced Power Electronics

AP30G40AEO N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp. AP30G40AEO Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ ICP=130A @VGE=3.3V ▼ Low Gate Drive ▼ Strobe Flash Applications ▼ RoHS Compliant & Halogen-Free C C C C TSSOP-8 G E E E VCE ICP G 400V 130A C E Absolute Maximum Ratings Symbol Parameter Rating VCE Collector-Emitter Voltage 400 VGEP Pe.

Features

00V -7 Qgc Gate-Collector Charge VGE=4V - 18 td(on) Turn-on Delay Time VCC=320V - 200 tr td(off) Rise Time Turn-off Delay Time IC=130A RG=10Ω - 1.3 - 600 tf Fall Time VGE=3.3V - 1.4 Cies Input Capacitance VGE=0V - 4000 Coes Output Capacitance VCE=30V - 30 Cres RthJA1 Reverse Transfer Capacitance f=1.0MHz Thermal Resistance Junction-Ambient - 20 -- Units V V A W oC oC Max. Units +30 uA 10 uA 6V 1.2 V 91.2 nC - nC - nC - ns - us - ns - us - pF - pF - pF 125 oC/W Notes: 1.Surface mounted on 1 in2 copper pad of FR4 board, t=10s. Data and specifications subject to change w.