AP30G120W Pb Free Plating Product Advanced Power Electronics Corp. Features N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR VCES ¡¿ ¡¿ ¡¿ ¡¿ 1200V 30A C High speed switching Low Saturation Voltage VCE(sat)=3.0V@IC=30A Industry Standard TO-3P Package RoHS Compliant IC G G C E TO-3P E www.DataSheet4U.com Absolute Maximum Ratings Symbol VCES VGE IC@TC=25¢.
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR VCES ¡¿ ¡¿ ¡¿ ¡¿ 1200V 30A C High speed switching Low Saturation Voltage VCE(sat)=3.0V@IC=30A Industry Standard TO-3P Package RoHS Compliant IC G G C E TO-3P E www.DataSheet4U.com Absolute Maximum Ratings Symbol VCES VGE IC@TC=25¢J IC@TC=100¢J ICM PD@TC=25¢J TSTG TJ TL Gate-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current 1 Parameter Collector-Emitter Voltage Rating 1200 ±30 60 30 160 208 -55 to 150 -55 to 150 300 Units V V A A A W ¢J ¢J ¢J Maximum Power Dissipation Storage Temperature Ra.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AP30G120ASW |
Advanced Power Electronics |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | |
2 | AP30G120ASW-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
3 | AP30G120BSW-HF |
Advanced Power Electronics |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | |
4 | AP30G120CSW-HF |
Advanced Power Electronics |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | |
5 | AP30G120SW |
Advanced Power Electronics |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | |
6 | AP30G100W |
Advanced Power Electronics |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | |
7 | AP30G40AEO |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
8 | AP30G40GEO-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
9 | AP3000 |
APTech |
1/4 INCH DIAPHRAGM VALVE | |
10 | AP3000A-00 |
ASI |
SILICON PIN DIODE CHIP | |
11 | AP3000C-11 |
ASI |
SILICON PIN DIODE | |
12 | AP3001 |
BCD Semiconductor |
PWM BUCK DC-DC CONVERTER |