AP30G120SW - Advanced Power Electronics

AP30G120SW N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Advanced Power Electronics Corp. AP30G120SW Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features ▼ High Speed Switching ▼ Low Saturation Voltage VCES IC VCE(sat)=3.0V@IC=30A ▼ CO-PAK, IGBT With FRD ▼ RoHS Compliant & Halogen-Free G C E TO-3P G Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parame.

Features

▼ High Speed Switching ▼ Low Saturation Voltage VCES IC VCE(sat)=3.0V@IC=30A ▼ CO-PAK, IGBT With FRD ▼ RoHS Compliant & Halogen-Free G C E TO-3P G Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage +30 IC@TC=25℃ Collector Current 60 IC@TC=100℃ ICM Collector Current Pulsed Collector Current1 30 120 IF@TC=25℃ Diode Forward Current 20 IF@TC=100℃ Diode Forward Current 10 IFM Diode Pulse Forward Current 40 PD@TC=25℃ Maximum Power Dissipation 208 TSTG Storage Temperature R.