AP30G40GEO-HF Advanced Power Electronics N-CHANNEL ENHANCEMENT MODE POWER MOSFET Datasheet, en stock, prix

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AP30G40GEO-HF

Advanced Power Electronics
AP30G40GEO-HF
AP30G40GEO-HF AP30G40GEO-HF
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Part Number AP30G40GEO-HF
Manufacturer Advanced Power Electronics
Description Advanced Power Electronics Corp. AP30G40GEO-HF Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ ICP=150A @VGE=3.0V ▼ Low Gate Drive ▼ Strobe Flash Applications ▼ RoHS Compliant & H...
Features rge VCE=200V -6 Qgc Gate-Collector Charge VGE=4V - 25 td(on) Turn-on Delay Time VCC=320V - 200 tr td(off) Rise Time Turn-off Delay Time IC=150A RG=10Ω - 900 - 800 tf Fall Time VGE=3V - 650 Cies Input Capacitance VGE=0V - 4140 Coes Output Capacitance VCE=30V - 30 Cres RthJA1 Reverse Transfer Capacitance f=1.0MHz Thermal Resistance Junction-Ambient - 20 -- Max. +30 10 9 1.2 96 125 Units uA uA V V nC nC nC ns ns ns ns pF pF pF oC/W Notes: 1.Surface mounted on 1 in2 copper pad of FR4 board, t=10s. Data and specifications subject to change without notice 1 201111251 AP...

Document Datasheet AP30G40GEO-HF Data Sheet
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