AP30G120ASW - Advanced Power Electronics

AP30G120ASW N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

AP30G120ASW RoHS-compliant Product Advanced Power Electronics Corp. Features ▼ High Speed Switching ▼ Low Saturation Voltage V CE(sat)=2.9V@IC=30A ▼ CO-PAK, IGBT With FRD ▼ RoHS Compliant N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. VCES IC C G C E TO-3P G E Parameter Rating 1200 +30 60 30 120 6 40 208 -55 to 150 -55 to 150 300 1200V 30A Absolu.

Features

▼ High Speed Switching ▼ Low Saturation Voltage V CE(sat)=2.9V@IC=30A ▼ CO-PAK, IGBT With FRD ▼ RoHS Compliant N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. VCES IC C G C E TO-3P G E Parameter Rating 1200 +30 60 30 120 6 40 208 -55 to 150 -55 to 150 300 1200V 30A Absolute Maximum Ratings Symbol VCES VGE IC@TC=25℃ IC@TC=100℃ ICM IF@TC=100℃ IFM PD@TC=25℃ TSTG TJ TL Gate-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current1 Diode Continunous Forward Current Diode Pulse Forward Current Maximum Power Dissipation Storage Temperature Range Ope.