AP30G40AEO Advanced Power Electronics N-CHANNEL ENHANCEMENT MODE POWER MOSFET Datasheet, en stock, prix

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AP30G40AEO

Advanced Power Electronics
AP30G40AEO
AP30G40AEO AP30G40AEO
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Part Number AP30G40AEO
Manufacturer Advanced Power Electronics
Description Advanced Power Electronics Corp. AP30G40AEO Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ ICP=130A @VGE=3.3V ▼ Low Gate Drive ▼ Strobe Flash Applications ▼ RoHS Compliant & Halo...
Features 00V -7 Qgc Gate-Collector Charge VGE=4V - 18 td(on) Turn-on Delay Time VCC=320V - 200 tr td(off) Rise Time Turn-off Delay Time IC=130A RG=10Ω - 1.3 - 600 tf Fall Time VGE=3.3V - 1.4 Cies Input Capacitance VGE=0V - 4000 Coes Output Capacitance VCE=30V - 30 Cres RthJA1 Reverse Transfer Capacitance f=1.0MHz Thermal Resistance Junction-Ambient - 20 -- Units V V A W oC oC Max. Units +30 uA 10 uA 6V 1.2 V 91.2 nC - nC - nC - ns - us - ns - us - pF - pF - pF 125 oC/W Notes: 1.Surface mounted on 1 in2 copper pad of FR4 board, t=10s. Data and specifications subject to change w...

Document Datasheet AP30G40AEO Data Sheet
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