AP18T10AGK-HF - Advanced Power Electronics

AP18T10AGK-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SOT-223 package is designed for suface mount application, larger heatsink than SO-8 and SOT package. Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parame.

Features

rameter Maximum Thermal Resistance, Junction-ambient 3 Value 45 Units ℃/W Data and specifications subject to change without notice 1 201008031 AP18T10AGK-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=2A VGS=5V, ID=1A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 o Min. 100 1 - Typ. 3.2 6 .