AP18T10GP-HF - Advanced Power Electronics

AP18T10GP-HF N-Channel MOSFET

AP18T10 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220 package is widely preferred for all commercial-industrial through hole applicatio.

Features

Total Power Dissipation TSTG Storage Temperature Range TJ Operating Junction Temperature Range Rating 100 +20 9 5.6 30 28 2 -55 to 150 -55 to 150 Units V V A A A W W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maixmum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value 4.5 62 Units ℃/W ℃/W 1 201406171 AP18T10GP-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(o.