AP18T10GM-HF - Advanced Power Electronics

AP18T10GM-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. SO-8 S S S Absolute Maximum Rati.

Features

mperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance Junction-ambient 3 Value 50 Unit ℃/W Data and specifications subject to change without notice 1 201004141 AP18T10GM-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=.