AP18T10GP - Advanced Power Electronics

AP18T10GP N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The TO-220 package is widely preferred for commercial-industrial power applications and suited for low voltage applications such as DC/DC converters. G D TO-220(P) S Absolute Maximum Ratings.

Features

nge Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maixmum Thermal Resistance, Junction-ambient Value 4.5 62 Units ℃/W ℃/W 1 201008121 Data and specifications subject to change without notice AP18T10GP Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Test Conditions VGS=0V, ID=250uA VGS=10V, ID=5A.