AP18T10GJ - Advanced Power Electronics

AP18T10GJ N-CHANNEL ENHANCEMENT MODE POWER MOSFET

G Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP18T10.

Features

A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 4.5 62.5 110 Units ℃/W ℃/W ℃/W Maixmum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 1 200903052 Datasheet pdf - http://www.DataSheet4U.co.kr/ AP18T10GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off).