AP18T10AGH-HF - Advanced Power Electronics

AP18T10AGH-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

G Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. D S TO-252(H) Absolute Maximu.

Features

e Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 4.5 62.5 Units ℃/W ℃/W Data and specifications subject to change without notice 1 201006011 Free Datasheet http://www.datasheet4u.net/ AP18T10AGH-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=5A VGS=4.5V, ID=1A VGS(th) gfs .