AON6407 - Alpha & Omega Semiconductors

AON6407 N-Channel MOSFET

The AON6407 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS ID (at VGS= -10V) RDS(ON) (at VGS= -10V) RDS(ON) (at VGS = -6V) -30 -85A < 4.5mΩ < 6.0mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View Bottom V.

Features

150 Units V V A VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS EAS PD PDSM TJ, TSTG A A mJ W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 14 40 1.1 Max 17 55 1.5 Units ° C/W ° C/W ° C/W Rev 0: Oct. 2011 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AON6407 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-30V, VGS=0V C TJ=55° VDS=0V, VGS=±25V VDS=VGS, ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-6V, ID=-20A Forw.