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Isc N-Channel MOSFET Transistor AOB27S60 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS .
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGSS ID IDM
Gate-Source Voltage
Drain Current-ContinuousTc=25℃ Tc=100℃
Drain Current-Single Pulsed
±30
27 17
110
PD
Total Dissipation @TC=25℃
357
Tch
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CH.
AOB27S60 - Alpha & Omega Semiconductors
The AOT27S60& AOB27S60 & AOTF27S60 have been fabricated using the advanced αMOSTM high voltage process that is designed .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | AOB270AL |
INCHANGE |
N-Channel MOSFET |
|
| 2 | AOB270AL |
Alpha & Omega Semiconductors |
75V N-Channel MOSFET |
|
| 3 | AOB270L |
Freescale |
75V N-Channel MOSFET |
|
| 4 | AOB20B65M1 |
Alpha & Omega Semiconductors |
IGBT |
|
| 5 | AOB20S60 |
Alpha & Omega Semiconductors |
Power Transistor |
|
| 6 | AOB20S60 |
INCHANGE |
N-Channel MOSFET |
|
| 7 | AOB20S60L |
Alpha & Omega Semiconductors |
Power Transistor |
|
| 8 | AOB210L |
INCHANGE |
N-Channel MOSFET |
|
| 9 | AOB210L |
Freescale |
30V N-Channel MOSFET |
|
| 10 | AOB210L |
Alpha & Omega Semiconductors |
30V N-Channel MOSFET |
|
| 11 | AOB2140L |
Alpha & Omega Semiconductors |
40V N-Channel MOSFET |
|
| 12 | AOB2140L |
INCHANGE |
N-Channel MOSFET |
|