• Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • Optimized Ruggedness • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 40V 195A < 1.5mΩ < 2mΩ Applications • DC Motor Driver • Synchronous Rectification in DC/DC and AC/DC Converters 100% UIS Tested 100% Rg Tested Top Vie.
M IDSM IAS EAS PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 40 ±20 195 195 1000 57 45.5 70 735 272 136 8.3 5.3 -55 to 175 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 12 50 0.42 Max 15 60 0.55 Units °C/W °C/W °C/W Rev.1.0: September 2017 www.aosmd.com Page 1 of 6 AOT2140L/AOB2140L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions.
·Drain Current ID= 195A@ TC=25℃ ·Drain Source Voltage : VDSS=40V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variatio.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AOB2144L |
INCHANGE |
N-Channel MOSFET | |
2 | AOB2144L |
Alpha & Omega Semiconductors |
40V N-Channel MOSFET | |
3 | AOB2146L |
INCHANGE |
N-Channel MOSFET | |
4 | AOB2146L |
Alpha & Omega Semiconductors |
40V N-Channel MOSFET | |
5 | AOB210L |
INCHANGE |
N-Channel MOSFET | |
6 | AOB210L |
Freescale |
30V N-Channel MOSFET | |
7 | AOB210L |
Alpha & Omega Semiconductors |
30V N-Channel MOSFET | |
8 | AOB20B65M1 |
Alpha & Omega Semiconductors |
IGBT | |
9 | AOB20S60 |
Alpha & Omega Semiconductors |
Power Transistor | |
10 | AOB20S60 |
INCHANGE |
N-Channel MOSFET | |
11 | AOB20S60L |
Alpha & Omega Semiconductors |
Power Transistor | |
12 | AOB240L |
INCHANGE |
N-Channel MOSFET |