AOB20S60 - Alpha & Omega Semiconductors

AOB20S60 Power Transistor

The AOT20S60& AOB20S60 & AOTF20S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply d.

Features

C Single pulsed avalanche energy G TC=25° C Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness H Peak diode recovery dv/dt Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D TC=25° C TC=100° C VGS ID IDM IAR EAR EAS PD dv/dt TJ, TSTG TL Symbol RθJA AOT20S60/AOB20S60 65 0.5 0.47 266 2.1 20 14 AOTF20S60 600 ±30 20
* 14
* 80 3.4 23 188 50 0.4 100 20 -55 to 150 300 AOTF20S60 65 -2.5 AOTF20S60L Units V V 20
* 14
* A A mJ mJ 37.8 0.3 W W/ oC V/ns ° C ° C AO.