The AOT270L/AOB270L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, ind.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 75V 140A < 2.6mΩ < 3.0mΩ (< 2.3mΩ ∗) (< 2.8mΩ ) ∗ D G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C C C Maximum 75 ±20 140 110 560 21.5 17 120 720 500 250 2.1 1.3 -55 to 175 Units V V A VGS TC=25° C C TC=100° TA=25° C C TA=70° ID IDM IDSM IAS EAS PD PDSM TJ, TSTG A A mJ W W ° C Avalanche energy L=0.1mH TC=25° C Power Dissipation B Power Dissipation A TC=100° C.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AOB270AL |
INCHANGE |
N-Channel MOSFET | |
2 | AOB270AL |
Alpha & Omega Semiconductors |
75V N-Channel MOSFET | |
3 | AOB27S60 |
Alpha & Omega Semiconductors |
Power Transistor | |
4 | AOB27S60 |
INCHANGE |
N-Channel MOSFET | |
5 | AOB20B65M1 |
Alpha & Omega Semiconductors |
IGBT | |
6 | AOB20S60 |
Alpha & Omega Semiconductors |
Power Transistor | |
7 | AOB20S60 |
INCHANGE |
N-Channel MOSFET | |
8 | AOB20S60L |
Alpha & Omega Semiconductors |
Power Transistor | |
9 | AOB210L |
INCHANGE |
N-Channel MOSFET | |
10 | AOB210L |
Freescale |
30V N-Channel MOSFET | |
11 | AOB210L |
Alpha & Omega Semiconductors |
30V N-Channel MOSFET | |
12 | AOB2140L |
Alpha & Omega Semiconductors |
40V N-Channel MOSFET |